Electromigration in LSI Aluminum Metallization.
نویسندگان
چکیده
منابع مشابه
Effect of under-bump-metallization structure on electromigration of Sn-Ag solder joints
The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from 135C to 165C. The UBM structures were examined: 5-μm-Cu/3-μm-Ni and 5 μm Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the differen...
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The advantages of using copper for interconnection in microcircuits are mostly due to its lower resistance compared to the aluminum metallization. Copper-based metallization has specific resistance of less than 2 μΩ-cm compared to more than 3 μΩ-cm for aluminum metallization. In combination with a reduced susceptibility to electromigration failures, this enables designing of highly scaled devic...
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We explore the effect of faceting on possible mechanisms for mass transport around electromigration voids in aluminum interconnects. Motivated by linear response estimates which suggest that particle flux would be much higher along steps than across terraces on a clean aluminum surface, we study step nucleation in the presence of a small driving force along a surface. We find that step nucleati...
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The electromigration-induced failure in flip-chip eutectic SnPb solder joints with a 10m-thick Cu under-bump metallization (UBM) was studied without the effect of current crowding in the solder region. The current crowding occurred inside the UBM instead of in the solder joint at the current density of 3.0 × 10 A/cm because of the spreading of current in the very thick Cu UBM. In these joints, ...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 1997
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.36.571